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Numéro de référence | MAAPGM0042-DIE | ||
Description | X/Ku-Band Power Amplifier | ||
Fabricant | Tyco Electronics | ||
Logo | |||
RO-P-DS-3037- -
1.2Wwww.DataSheet4U.com X/Ku-Band Power Amplifier
11.5-16.0 GHz
Preliminary Information
Features
♦ 11.5-16.0 GHz Operation
♦ 1.2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Self-Aligned MSAG® MESFET Process
11.5-16.0 GHz GaAs MMIC Amplifier
Primary Applications
♦ Point-to-Point Radio
♦ SatCom
♦ Radio Location
Description
The MAAPGM0042-DIE is a 3-stage 1.2 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG®) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
11.5-16.0
GHz
Output Power
Power Added Efficiency
POUT
PAE
31
30
dBm
%
1-dB Compression Point
P1dB
28
dBm
Small Signal Gain
G
20
dB
VSWR
VSWR
1.9:1
Gate Current
Drain Current
Output Third Order Intercept
IGG
IDD
OTOI
<5
< 600
35
mA
mA
dBm
Noise Figure
NF
10
dB
2nd Harmonic
2f
-27 dBc
3rd Harmonic
3f
-35 dBc
1. TB = MMIC Base Temperature
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Pages | Pages 6 | ||
Télécharger | [ MAAPGM0042-DIE ] |
No | Description détaillée | Fabricant |
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