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PDF MAAPGM0037-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0037-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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Amplifier, Power, 1.0W
6.5-12.5 GHz
Features
♦ 1.0 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ Process
MAAPGM0037-DIE
903241 —
Preliminary Information
Description
The MAAPGM0037-Die is a 2-stage 1.0 W power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on both
the input and output. It can be used as a power amplifier stage or as
a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufactur-
ing processes, planar processing of ion implanted transistors, multi-
ple implant capability enabling power, low-noise, switch and digital
FETs on a single chip, and polyimide scratch protection for ease of
use with automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal formulation
prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ Instrumentation
♦ Test Equipment
♦ Electronic Warfare
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -1.8V, Pin = 20 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
6.5-12.5
GHz
Output Power
Power Added Efficiency
POUT
PAE
30
27
dBm
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G 13
dB
Input VSWR
VSWR
3:1
Output VSWR
VSWR
2:1
Gate Current
Drain Current
Output Third Order Intercept
IGG
IDD
TOI
<2
< 500
37
mA
mA
dBm
Noise Figure
NF 8 dB
3rd Order Intermodulation Distortion
IM3
30
dBc
Single Carrier Level = 21 dBm
5th Order Intermodulation Distortion
IM5
43
dBc
Single Carrier Level = 21 dBm
1. TB = MMIC Base Temperature
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
Amplifier, Power, 1.0W
6.5-12.5 GHz
Assembly and Bonding Diagram
100 pF
0.1 μF
RFIN
IN
VDD
GN D: G
GND :G
VGG
GND :G
GN D: G
100 pF
MAAPGM0037-DIE
903241 —
Preliminary Information
VDD
RFOUT
OUT
VGG
0.1 μF
Figure 6. Recommended bonding diagram for pedestal mount.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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