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MAAPGM0030-DIE fiches techniques PDF

Tyco Electronics - Power Amplifier

Numéro de référence MAAPGM0030-DIE
Description Power Amplifier
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MAAPGM0030-DIE fiche technique
www.DataSheet4U.com
5.0-9.0 GHz 1W Power Amplifier
RO-P-DS-3021 A
Preliminary Information
MAAPGM0030-DIE
Features
1 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
GaAs MSAG® Process
Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0030-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
Multiple Band Point-to-Point Radio
SatCom
ISM Band
Electrical Characteristics: TB = 40°C1, Z0 = 50, VDD = 8V, IDQ 240 mA2, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
5.0-9.0
GHz
Output Power
Power Added Efficiency
POUT
PAE
30
35
dBm
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G
17
dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.8:1
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
3rd Order Intermodulation Distortion
Single Carrier Level = 20 dBm
5th Order Intermodulation Distortion
Single Carrier Level = 20 dBm
Noise Figure
2nd Harmonic
3rd Harmonic
IGG
IDD
OTOI
IM3
IM5
NF
2f
3f
<4
< 400
38
-14
-33
8
-20
-35
mA
mA
dBm
dBm
dBm
dB
dBc
dBc
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.

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