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Numéro de référence | MAAPGM0030-DIE | ||
Description | Power Amplifier | ||
Fabricant | Tyco Electronics | ||
Logo | |||
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5.0-9.0 GHz 1W Power Amplifier
RO-P-DS-3021 A
Preliminary Information
MAAPGM0030-DIE
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ GaAs MSAG® Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
Description
The MAAPGM0030-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG®) MESFET
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ Multiple Band Point-to-Point Radio
♦ SatCom
♦ ISM Band
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, IDQ ≈ 240 mA2, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
5.0-9.0
GHz
Output Power
Power Added Efficiency
POUT
PAE
30
35
dBm
%
1-dB Compression Point
P1dB
29
dBm
Small Signal Gain
G
17
dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.8:1
Gate Supply Current
Drain Supply Current
Output Third Order Intercept
3rd Order Intermodulation Distortion
Single Carrier Level = 20 dBm
5th Order Intermodulation Distortion
Single Carrier Level = 20 dBm
Noise Figure
2nd Harmonic
3rd Harmonic
IGG
IDD
OTOI
IM3
IM5
NF
2f
3f
<4
< 400
38
-14
-33
8
-20
-35
mA
mA
dBm
dBm
dBm
dB
dBc
dBc
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve IDQ indicated.
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Pages | Pages 6 | ||
Télécharger | [ MAAPGM0030-DIE ] |
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