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PDF MAAPGM0029-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0029-DIE | |
| Descripción | Amplifier | |
| Fabricantes | Tyco Electronics | |
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Amplifier, Power, 1W
3.5-6.5 GHz
Features
♦ 1 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ Process
MAAPGM0029-DIE
903240 —
Preliminary Information
Description
The MAAPGM0029-Die is a 2-stage 1 W power amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance
and highly reliable GaAs Multifunction Self-Aligned Gate
(MSAG™) Process, each device is 100% RF tested on wafer
to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like
manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-
noise, switch and digital FETs on a single chip, and polyimide
scratch protection for ease of use with automated manufactur-
ing processes. The use of refractory metals and the absence
of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ Wireless Local Loop
♦ 3.7- 4.2 GHz SatCom
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 16 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
3.5-6.5
GHz
Output Power
Power Added Efficiency
1-dB Compression Point
POUT
PAE
P1dB
31
40
30
dBm
%
dBm
Small Signal Gain
Input VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
2nd Harmonic
3rd Harmonic
G
VSWR
IGG
IDD
OTOI
NF
2f
3f
20
1.5:1
<4
< 400
42
7
-15
-25
dB
mA
mA
dBm
dB
dBc
dBc
1. TB = MMIC Base Temperature
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
Amplifier, Power, 1W
3.5-6.5 GHz
Assembly and Bonding Diagram
100 pF
RFIN
MAAPGM0029-DIE
903240 —
Preliminary Information
0.1 μF
VDD
RFOUT
100 pF
VGG
0.1 μF
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW test-
Assembly Instructions:
Die attach: Use AuSn (80/20) 1 mil preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques.
For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge
bonds of shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
5 Page | ||
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