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MAAPGM0021-DIE fiches techniques PDF

Tyco Electronics - 2W C/X-Band Power Amplifier

Numéro de référence MAAPGM0021-DIE
Description 2W C/X-Band Power Amplifier
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MAAPGM0021-DIE fiche technique
RO-P-DS-3012 - A
2Wwww.DataSheet4U.com C/X-Band Power Amplifier
4.5–9.0 GHz
Preliminary Information
Features
4.5 to 9.0 GHz Operation
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG® MESFET Process
4.5-9.0 GHz GaAs MMIC Amplifier
Primary Applications
Multiple Band Point-to-Point Radio
SatCom
ISM Band
Description
The MAAPGM0021-Die is a 2-stage 2 W power amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM’s repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG®) MESFET Process.
This process provides polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
Output Power
f
POUT
4.5-9.0
33
GHz
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
31
dBm
Small Signal Gain
G
17 dB
Input VSWR
VSWR
1.7:1
Gate Current
IGG
<2
mA
Drain Current
IDD
< 750
mA
Output Third Order Intercept
OTOI
41
dBm
Noise Figure
NF
9
dB
3rd Order Intermodulation Distortion
IM3
31
dBc
Single Carrier Level = 23 dBm
5th Order Intermodulation Distortion
IM5
41
dBc
Single Carrier Level = 23 dBm
1. TB = MMIC Base Temperature

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