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PDF DC9015 Data sheet ( Hoja de datos )
| Número de pieza | DC9015 | |
| Descripción | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | Dc Components | |
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DC9015
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
-50
-45
-5
-100
450
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70) Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector-Base Breakdown Volatge
BVCBO -50
Collector-Emitter Breakdown Voltage BVCEO -45
Emitter-Base Breakdown Volatge
BVEBO
-5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
Base-Emitter On Voltage
DC Current Gain(1)
VBE(on)
hFE
-0.6
60
Transition Frequency
fT 100
Output Capacitance
Cob -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
-
-
-
-0.2
-0.82
-0.65
-
190
4.5
Max
-
-
-
-50
-50
-0.7
-1
-0.75
1000
-
7
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
IC=-2mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz, IE=0
Classification of hFE
Rank
A
Range
60~150
B
100~300
C
200~600
D
400~1000
1 page | ||
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| PDF Descargar | [ Datasheet DC9015.PDF ] | |
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