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PDF BC639 Data sheet ( Hoja de datos )
| Número de pieza | BC639 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC639 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 SEPT 93
FEATURES
* 1 Amp continuous current
* Ptot= 800 mW
BC639
E
C
B
ABSOLUTE MAXIMUM RATINGS.
TO92
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
VALUE
80
80
5
1
800
-55 to +150
UNIT
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 80
V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 80
V IC=10mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V IE=10µA, IC=0
Collector Cut-Off Current ICBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1 µA VCB=30V
0.5 V
IC=500mA, IB=50mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1.0 V
IC=500mA,VCE=2V*
Static Forward Current hFE
Transfer Ratio
25
40
25
160
Transition
Frequency
fT
200 MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
IC=5mA, VCE=2V*
IC=150mA, VCE=2V*
IC=500mA, VCE=2V*
IC=50mA, VCE=2V
f=100MHz
3-18
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BC639.PDF ] | |
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