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PDF MA4VAT900-1277T Data sheet ( Hoja de datos )

Número de pieza MA4VAT900-1277T
Descripción HMIC PIN Diode Variable Attenuator
Fabricantes Tyco Electronics 
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HMIC PIN Diode Variable Attenuator
0.80-1.0 GHz
Features
Bandwidth: 0.80 GHz to 1.00 GHz
<1.0 dB Insertion Loss, Typical
1.4:1 VSWR, Typical
24 dB Attenuation, Typical
40 dBm IIP3, Typical ( 1MHz Offset, @ +0dBm Pinc )
0-1.8 Volt Control Voltage.
User can add an External Resistor for higher
voltage requirements.
RoHs Compliant
Extra Features
Usable Bandwidth: 0.60 GHz to 2.00 GHz
1.9 dB Insertion Loss, Max
2:1 VSWR, Max
20 dB Attenuation, Max
Description and Applications
M/A-COM’s MA4VAT900-1277T is a HMIC
MONLITHIC PIN Diode Variable Attenuator which
utilizes an integrated 90 degree 3dB hybrid with a
pair of Silicon PIN Diodes to perform the required
attenuation function as Voltage (Current) is applied.
This device operates from 0 to 2 Volts at 330 uA
typical control current for maximum attenuation. The
user can add external biasing resistors to the bias
ports for higher voltage requirements as required.
M/A-COM’s MA4VAT900-1277T PIN Diode Variable
Attenuator is designed for AGC Circuit Applications
requiring:
Lower Insertion Loss
Lower distortion through attenuation
Larger dynamic range for wide spread spectrum
applications
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4VAT900-1277T
V2
MLP 3mm Package—Circuit Side View
PIN 1
PIN 16
PIN Configuration
PIN Function
1 GND
2 GND
PIN Function
9 DC2
10 GND
3 GND 11 GND
4 GND 12 DC1
5 GND 13 GND
6 RF2 14 GND
7 GND 15 RF1
8 GND 16 GND
Center Paddle is RF and D.C. Ground
Note: RF Input & RF Output Ports are Functionally Symmetrical
Absolute Maximum Ratings @ +25 °C
Parameter
Maximum Ratings
Operating Temperature
-40 °C to +85 °C
Storage Temperature
-65 °C to +150 °C
Junction Temperature
+175 °C
RF C.W. Incident Power
+33 dBm C.W.
Reversed Current @ -30 V
50nA
Control Current
5 mA per Diode
Notes:
1. All the above values are at +25 °C, unless otherwise noted.
2. Exceeding these limits may cause permanent damage.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.

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