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Numéro de référence | MA4SW610B-1 | ||
Description | SP6T PIN Diode Switch | ||
Fabricant | Tyco Electronics | ||
Logo | |||
1 Page
SP6Twww.DataSheet4U.com PIN Diode Switch with
Integrated Bias Network
V 1.00
Features
n Ultra Broad Bandwidth: 2 GHz to 18 GHz
n 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz
n Reliable. Fully Monolithic, Glass Encapsulated
Construction
MA4SW510B-1 Layout
Description
The MA4SW610B-1 is a Reflective SP6T Series-Shunt broad band
switch with integrated bias networks made with M/A-COM’s
HMICTM (Heterolithic Microwave Integrated Circuit) process, US
Patent 5,268,310. This process allows the incorporation of silicon
pedestals that form series and shunt diodes or vias by imbedding
them in low loss, low dispersion glass. By using small spacing
between elements, this combination of silicon and glass gives
HMIC devices low loss and high isolation performance
through 18 GHz.
Applications
These high performance switches are suitable for the use in
multi-band ECM, Radar, and instrumentation control circuits
where high isolation to insertion loss ratios are required. With a
standard +5 V/-5 V, TTL controlled PIN diode driver, 80 ns
switching speeds are achieved.
Absolute Maximum Ratings1
@ TA = +25 °C (unless otherwise
specified)
Parameter
Operating Temperature
Storage Temperature
RF C.W. Incident Power
(+/-20 mA)
Bias Current (Forward)
Applied Voltage (Reverse)
Value
-65 °C to +125 °C
-65 °C to +150 °C
+ 30 dBm
+/- 40 mA
15 V
1. Exceeding any of these values may result in permanent
damage
Nominal Chip Dimensions
Chip
RF
DC
J1
J2
B2
J3
B3
J4
B4
J5
B5
J6
B6
J7
B7
Chip Dimensions (µm)
XY
3370
3120
Pad Dimensions (µm)
X
Y
400 125
125 125
Pad Locations (µm)
X
Y
00
-1535
+300
-1535
+1000
-1535
+1800
-1535
+2500
-750
+2820
-50 +2820
+750
+2820
+1450
+2820
+1535
+1800
+1535
+1100
+1535
+300
+900
0
Pad Locations Relative to J1
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Pages | Pages 6 | ||
Télécharger | [ MA4SW610B-1 ] |
No | Description détaillée | Fabricant |
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