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PDF MA4SPS552 Data sheet ( Hoja de datos )
| Número de pieza | MA4SPS552 | |
| Descripción | Surface Mount Monolithic PIN Diode Chip | |
| Fabricantes | Tyco Electronics | |
| Logotipo |  |
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Surfacewww.DataSheet4U.com Mount Monolithic
PIN Diode Chip
V 1.00
Features
n Surface Mount Device
n No Wirebonds Required
n Rugged Silicon-Glass Construction
n Silicon Nitride Passivation
n Polymer Scratch Protection
n Low Parasitic Capacitance and Inductance
n High Power Handling (Efficient Heatsinking)
Description
This device is a silicon-glass PIN diode chip fabricated with
M/A-COM’s patented HMIC process. This device features
two silicon pedestals embedded in a low loss glass. The diode
is formed on the top of one pedestal and connections to the
backside of the device are facilitated by making the pedestal
sidewalls conductive. Selective backside metalization is
applied producing a surface mount device. The topside is fully
encapsulated with silicon nitride and has an additional polymer
layer for scratch protection. These protective coatings prevent
damage to the junction and the anode air-bridge during
handling and assembly.
Applications
These packageless devices are suitable for usage in moderate
incident power (5 W C.W.) or higher incident peak power
(200 W) series, shunt, or series-shunt switches. Small parasitic
inductance, 0.7 nH, and excellent RC time constant, 0.20 pS,
make the devices ideal for wireless TR switch and accessory
switch circuits, where higher P1dB and IP3 values are required.
These diodes can also be used in π, T, tapered resistance, and
switched-pad attenuator control circuits for 50Ω or 75Ω
systems.
Absolute Maximum Ratings1
@ TA = +25°C (unless otherwise specified)
Parameter
Absolute Maximum
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Dissipated RF & DC Power
Mounting Temperature
100 mA
-200 V
-65 °C to +150 °C
-65 °C to +150 °C
+175 °C
1W
+235 °C for 10 seconds
Case Style ODS-1281
A
B
D EF
C
G
Dim Inches
Millimeters
Min. Max. Min. Max.
A 0.0207 0.0226 0.525 0.575
B 0.0108 0.0128 0.275 0.325
C 0.0040 0.0080 0.102 0.203
D 0.0069 0.0089 0.175 0.225
E 0.0018 0.0037 0.045 0.095
F 0.0061 0.0081 0.155 0.205
G 0.0069 0.0089 0.175 0.225
1. Backside metal: 0.1 micron thk.
2. Hatched areas indicate bond pads.
1. Exceeding these limits may cause permanent damage.
1 page  
Surface Mount PIN Diode Chip
1.0E+06
MA4SPS552 SurMount TM Series
V 1.00
Parallel Resistance vs V
1.0E+05
100MHz
1.0E+04
1GHz
1.0E+03
0.0
-5.0 -10.0 -15.0 -20.0 -25.0 -30.0 -35.0 -40.0
Reverse Bias ( -V )
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
5
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MA4SPS552.PDF ] | |
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