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MA4TD0410 fiches techniques PDF

M-pulse Microwave - Silicon Bipolar MMIC Cascadable Amplifier

Numéro de référence MA4TD0410
Description Silicon Bipolar MMIC Cascadable Amplifier
Fabricant M-pulse Microwave 
Logo M-pulse Microwave 





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MA4TD0410 fiche technique
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M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0410
Features
Cascadable 50Ω Gain Block
3dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0410 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0410 is
useful where a general purpose 50Ω gain block with
moderate (+16 dBm) gain compression is required.
Typical applications include narrow and wide band IF
and RF amplifiers in industrial and military applications.
The MP4TD0410 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
10
9
8
7
6
Id=50mA
5
4
3
2
1
0
0.1
1
FREQUENCY (GHz)
10
Gold-Ceramic Microstrip Package Outline1,2
.040
1,02
4 GND
RF INPUT
1
RF OUT
AND BIAS
3
.020
0,51
.004 ±.002
0,1 ±0,05
2 GND
.100
2,54
.035
0,89
.495 ±.030
12,57 ±0,76
Notes: (unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx = ±.005; mm .xx = ±.13
Pin Configuration
Pin Number
Pin Description
1 RF Input
2&4
AC/DC Ground
3 RF Output and DC Bias
Ordering Information
Model No.
Package
MA4TD0410
Hermetic Ceramic
MA4TD0410T
Tape and Reel
Electrical Specifications @ TA = +25°C, Id = 50 mA, Z0 = 50Ω
Symbol Parameters
Test Conditions
Gp Power Gain (S212)
f = 0.1 GHz
ΔGp Gain Flatness
f = 0.1 to 2.0 GHz
f3 dB
3 dB Bandwidth
-
SWRin Input SWR
f = 0.1 to 3.0 GHz
SWRout Output SWR
f = 0.1 to 3.0 GHz
P1dB Output Power @ 1 dB Gain Compression
f = 1.0 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
-
dV/dT Device Voltage Temperature Coefficient
-
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/°C
Min.
8.0
-
-
-
-
-
-
-
-
4.75
-
Typ.
9.0
±0.6
3.0
1.5
1.6
12.5
6.2
25.5
125
5.25
-8.0
Max.
9.5
±1.0
-
-
-
-
-
-
-
5.75
-
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________
PH (408) 432-1480 FX (408) 432-3440
1

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