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PDF MA4E2501-1290 Data sheet ( Hoja de datos )
| Número de pieza | MA4E2501-1290 | |
| Descripción | SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes | |
| Fabricantes | Tyco Electronics | |
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SURMOUNTTM Low Barrier 0201 Footprint
Silicon Schottky Diodes
Features
• Extremely Low Parasitic Capitance and
Inductance
• Extremely Small 0201 (600x300um) Footprint
• Surface Mountable in Microwave Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300 °C,
16 hours)
• Lower Susceptibility to ESD Damage
Description and Applications
The MA4E2501L-1290 SurMount™ Diodes are
Silicon Low Barrier Schottky Devices fabricated with
the patented Heterolithic Microwave Integrated
Circuit (HMIC) process. HMIC circuits consist of
Silicon pedestals which form diodes or via
conductors embedded in a glass dielectric, which
acts as the low dispersion, microstrip transmission
medium. The combination of silicon and glass allows
HMICwww.DataSheet4U.com devices to have excellent loss and power
dissipation characteristics in a low profile, reliable
device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a
beam lead device coupled with the superior
mechanical performance of a chip. The SurMount
structure employs very low resistance silicon vias to
connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic
discharge than conventional beam lead Schottky
diodes.
The multi-layer metalization employed in the
fabrication of the Surmount Schottky junctions
includes a platinum diffusion barrier, which permits
all devices to be subjected to a 16-hour
non-operating stabilization bake at 300°C.
The extremely small “ 0201 ” outline allows for
Surface Mount placement and multi-functional
polarity orientations.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
MA4E2501-1290
Series V1
The MA4E2501L-1290 SurMount Low Barrier
Schottky diodes are recommended for use in
microwave circuits through Ku band frequencies for
lower power applications such as mixers,
sub-harmonic mixers, detectors and limiters. The
HMIC construction facilitates the direct replacement
of more fragile beam lead diodes with the
corresponding Surmount diode, which can be
connected to a hard or soft substrate circuit with
solder.
Case Style 1290
A
B
DE
C
F
G
-
Cathode
+
Anode
Inches
Millimeters
Dim Min.
Max.
Min.
Max.
A
0.023
0.025
0.575
0.625
B
0.011
0.013
0.275
0.325
C
0.004
0.008
0.102
0.203
D
0.006
0.008
0.150
0.200
E
0.007
0.009
0.175
0.225
F
0.006
0.008
0.150
0.200
G
0.009
0.011
0.220
0.270
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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| PDF Descargar | [ Datasheet MA4E2501-1290.PDF ] | |
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