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PDF LH28F320BFHG-PTTLZM Data sheet ( Hoja de datos )
| Número de pieza | LH28F320BFHG-PTTLZM | |
| Descripción | 32M (x16) Flash Memory | |
| Fabricantes | Sharp Electrionic | |
| Logotipo |  |
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Date Mar. 26. 2003
www.DataSheet4U.com
32M (x16) Flash Memory
LH28F320BFHG-PTTLZM
1 page  
LHF32FDL
3
12345678
A A13 A11 A8 VPP WP# A19 A7 A4
B A14 A10 WE# RST# A18 A17 A5 A2
C A15 A12 A9 NC A20 A6 A3 A1
D A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE# A0
E VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0 GND
F GND DQ7 DQ13 DQ4 VCC DQ10 DQ1 OE#
0.75mm pitch
48-BALL CSP
PINOUT
7mm x 7mm
TOP VIEW
Figure 1. 0.75mm pitch 48-Ball CSP (7mm×7mm) Pinout
Rev. 2.44
5 Page 
LHF32FDL
9
Table 5. Bus Operation(1, 2)
Mode
Read Array
Notes RST# CE# OE# WE# Address VPP DQ0-15
6 VIH VIL VIL VIH
X
X DOUT
Output Disable
Standby
VIH VIL VIH VIH
VIH VIH
X
X
X
X
X High Z
X High Z
Reset
3 VIL
X
X
X
X
X High Z
Read Identifier
Codes/OTP
6
VIH
VIL
VIL
See See
VIH Table 3 and X Table 3 and
Table 4
Table 4
Read Query
6,7 VIH
VIL
VIL
VIH
See
Appendix
X
See
Appendix
Write
4,5,6 VIH VIL VIH VIL
X
X DIN
NOTES:
1. Refer to DC Characteristics. When VPP≤VPPLK, memory contents can be read, but cannot be altered.
2. X can be VIL or VIH for control pins and addresses, and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK
and VPPH1/2 voltages.
3. RST# at GND±0.2V ensures the lowest power consumption.
4. Command writes involving block erase, full chip erase, (page buffer) program or OTP program are reliably executed
when VPP=VPPH1/2 and VCC=2.7V-3.6V.
5. Refer to Table 6 for valid DIN during a write operation.
6. Never hold OE# low and WE# low at the same timing.
7. Refer to Appendix of LH28F320BF series for more information about query code.
Rev. 2.44
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet LH28F320BFHG-PTTLZM.PDF ] | |
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