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Tyco Electronics - AlGaAs SP2T PIN Diode Switch

Numéro de référence MA4AGSW2
Description AlGaAs SP2T PIN Diode Switch
Fabricant Tyco Electronics 
Logo Tyco Electronics 





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MA4AGSW2 fiche technique
AlGaAs SP2T PIN
Diode Switch
V 1.00
www.DataSheet4U.com
Features
n Ultra Broad Bandwidth: 50 MHz to 50 GHz
n Functional bandwidth : 50 MHz to 70 GHz
n 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz
n Low Current consumption:
-10 mA for Low Loss State
+10 mA for Isolation
n M/A-COM’s unique patent pending AlGaAs
hetero-junction anode technology
n Silicon Nitride Passivation
n Polymide Scratch protection
MA4AGSW2 Layout
Description
M/A-COM’s MA4AGSW2 is an Aluminum-Gallium-Arsenide
anode enhanced, SP2T PIN diode switch. AlGaAs anodes, which
utilize M/A-COM’s patent pending hetero-junction technology,
which produce less loss than conventional GaAs processes, as
much as 0.3 dB reduction in insertion loss at 50 GHz. These
devices are fabricated on a OMCVD epitaxial wafer using a
process designed for high device uniformity and extremely low
parasitics. The diodes themselves exhibit low series resistance,
low capacitance, and fast switching speed. They are fully
passivated with silicon nitride and have an additional layer of a
polymer for scratch protection. The protective coating prevents
damage to the junction and the anode airbridges during handling.
Off-chip bias circuitry is required and allows maximum design
flexibility.
Applications
The low capacitance of the PIN diodes used makes it ideal for use
in microwave multi-throw switch designs, where the series
capacitance in each off-arm will load the input. Also, the low
series resistance of the diodes helps the total insertion loss of the
devices at microwave frequencies. These AlGaAs PIN switches
are used as the switching arrays for radar systems, radiometers, and
other multi-assembly components.
Absolute Maximum Ratings1
@ TA = +25 °C (Unless otherwise
specified)
Parameter
Operating Temperature
Storage Temperature
Incident C.W. RF Power
Breakdown Voltage
Bias Current
Maximum Rating
-55 °C to +125 °C
-65 °C to +150 °C
+ 23 dBm C. W.
25 V
+/- 30 mA
1. Exceeding any of these values may result in permanent
damage
Nominal Chip Dimensions
Chip
RF
J1
J2
J3
Chip Dimensions (µm)
X
Y
1290
825
Pad Dimensions (µm)
X
Y
100 100
Pad Locations (µm)
X
Y
00
-520
+350
+520
+350
Pad Locations Relative to J1

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