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NTE Electronics - Silicon NPN Transistor Horizontal Deflection Output

Numéro de référence NTE2661
Description Silicon NPN Transistor Horizontal Deflection Output
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE2661 fiche technique
NTE2661
Silicon NPN Transistor
Horizontal Deflection Output for HDTV
Features:
D High Speed: tf = 0.15µs Typ
D High Breakdown Voltage: VCBO = 1700V
D Low Saturation Voltage: VCE(sat) = 3V Max
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectortoBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
CollectortoEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
EmittertoBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collectorwww.DataSheet4U.com Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
ICBO VCB = 1700V, IE = 0
− − 1.0 mA
Emitter Cutoff Current
IEBO VEB = 5V, IC = 0
− − 10 µA
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0
600 − − V
DC Current Gain
hFE VCE = 5V, IC = 2A
10 30
VCE = 5V, IC = 11A
4.5 8.5
CollectorEmitter Saturation Voltage VCE(sat) IC = 11A, IB = 2.75A
−−3V
BaseEmitter Saturation Voltage
VBE(sat) IC = 11A, IB = 2.75A
1.0 1.3 V
Transition Frequency
fT VCE = 10V, IE = 0.1A
1.7 MHz
Collector Output capacitance
Cob VCB = 10V, IE = 0, f = 1MHz 290 pF
Storage Time
Fall Time
tstg IC(peak) = 10A, IB1 = 1.8A, 2.5 4.0 µs
tf fH = 64kHz
0.15 0.3 µs

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