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دیتاشیت - Comchip Technology - SMD Schottky Barrier Diode

شماره قطعه CDBUR70
شرح مفصل SMD Schottky Barrier Diode
تولید کننده Comchip Technology 
آرم Comchip Technology 


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CDBUR70 شرح
SMD Schottky Barrier Diode
CDBUR70(RoHs Device)
Io = 70 mA
VR = 70 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
SMD Diodes Specialist
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
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Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
70 V
Reverse voltage
VR 70 V
RMS reverse voltage
VR(RMS)
49 V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
IO
IFSM
PD
70 mA
0.1 A
150 mW
Storage temperature
TSTG
-65
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
IF = 1mA
IF = 15mA
VR = 50V
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
VF
IR
CT
Trr
0.41
1
0.1
2
5
V
uA
pF
nS
QW-A1086
REV:A
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