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دیتاشیت - Comchip Technology - SMD Schottky Barrier Diode

شماره قطعه CDBUR40
شرح مفصل SMD Schottky Barrier Diode
تولید کننده Comchip Technology 
آرم Comchip Technology 


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CDBUR40 شرح
SMD Schottky Barrier Diode
CDBUR40(RoHs Device)
Io = 200 mA
VR = 40 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
SMD Diodes Specialist
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
www.DataSheet4U.com
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Peak reverse voltage
VRM
40 V
Reverse voltage
VR 40 V
RMS reverse voltage
VR(RMS)
28 V
Average forward rectified current
Forward current,surge peak
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
Power dissipation
IO
IFSM
PD
200 mA
0.6 A
150 mW
Storage temperature
TSTG
-65
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
Reverse current
IF = 1mA
IF = 40mA
VR = 30V
VF
0.38
1
V
IR 0.2 uA
Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage
CT
5 pF
Reverse recovery time
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
Trr
5 nS
QW-A1080
REV:A
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