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CDBUR0230R fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBUR0230R
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBUR0230R fiche technique
SMD Schottky Barrier Diode
CDBUR0230R(RoHs Device)
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
www.DataSheet4U.com
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
35 V
VR 30 V
IO 200 mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1A
Storage temperature
Junction temperature
TSTG
Tj
-40
+125
+125
OC
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol Min Typ Max Unit
VF 0.6 V
IR 30 uA
QW-A1068
REV:A
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