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CDBUR0140R fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBUR0140R
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBUR0140R fiche technique
SMD Schottky Barrier Diode
CDBUR0140R(RoHs Device)
Io = 100 mA
VR = 40 Volts
SMD Diodes Specialist
Features
Low reverse current.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 0603(1608) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.003 gram(approx.).
www.DataSheet4U.com
0603(1608)
0.071(1.80)
0.063(1.60)
0.039(1.00)
0.031(0.80)
0.018(0.45) Typ.
0.033(0.85)
0.027(0.70)
0.028(0.70) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive Peak reverse voltage
VRRM
45 V
Reverse voltage
VR 40 V
Average forward rectified current
Forward current,surge peak
Storage temperature
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
IO
IFSM
TSTG
-40
100
1
+125
mA
A
OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 10mA
VF 0.45 V
Reverse current
VR = 10V
IR 1 uA
Capacitance between terminals f = 1 MHz, and 10 VDC reverse voltage
CT
6 pF
QW-A1060
REV:A
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