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PDF MAAPGM0036-DIE Data sheet ( Hoja de datos )
| Número de pieza | MAAPGM0036-DIE | |
| Descripción | 1.2W Power Amplifier | |
| Fabricantes | Tyco Electronics | |
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1.2-3.2 GHz 1.2W Power Amplifier
Features
♦ 1.2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ MSAG™ MESFET Process
♦ Proven Manufacturability and Reliability
No Airbridges
Polyimide Scratch Protection
No Hydrogen Poisoning Susceptibility
MAAPGM0036-DIE
RO-P-DS-3017 B
Preliminary Information
Description
The MAAPGM0036-Die is a 2-stage power amplifier with on-chip bias
networks. This product is fully matched to 50 ohms on both the input and
output. It can be used as a power amplifier stage or as a driver stage in
high power applications.
www.DataSheet4U.com
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Primary Applications
♦ 2.5-2.7 GHz MMDS
♦ GPS
♦ Radar
♦ Telemetry
Electrical Characteristics: TB = 40°C1, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 460mA2, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
f
1.2-3.2
GHz
Output Power
POUT
31
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
30
dBm
Small Signal Gain
G
20 dB
Input VSWR
VSWR
1.4:1
Output VSWR
VSWR
1.8:1
Gate Supply Current
IGG
<5
mA
Drain Supply Current
IDD
< 725
mA
Output Third Order Intercept
OTOI
40
dBm
3rd Order Intermodulation Distortion
IM3
-10
dBm
Single Carrier Level = 21 dBm
5th Order Intermodulation Distortion
IM5
-35
dBm
Single Carrier Level = 21 dBm
Noise Figure
NF
2nd Harmonic
2f
3rd Harmonic
3f
1. TB = MMIC Base Temperature
2. Adjust VGG between –2.4 and –1.5V to achieve indicated IDQ.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
5 dB
-12 dBc
-20 dBc
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
1 page  
1.2-3.2 GHz 1.2W Power Amplifier
MAAPGM0036-DIE
RO-P-DS-3017 B
Preliminary Information
Mechanical Information
Chip Size: 2.986 x 2.982 x 0.075 mm (118 x 117 x 3 mils)
2.982mm.
2.830mm.
2.830mm.
1.492mm.
1.492mm.
0.154mm.
0
0
0.152mm.
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Figure 5. Die Layout
Bond Pad Dimensions
Pad
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
Size (µm)
100 x 200
200 x 150
150 x 150
Size (mils)
4x8
8x6
6x6
5
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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