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IRLR8113PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRLR8113PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRLR8113PBF fiche technique
www.DataSheet4U.com
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
™Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
www.irf.com
PD - 95779A
IRLR8113PbF
IRLU8113PbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 6.0m
22nC
D-Pak
IRLR8113
I-Pak
IRLU8113
Max.
30
± 20
94f
67f
380
89
44
0.59
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
–––
–––
Max.
1.69
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/7/04

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