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PDF IRF7328 Data sheet ( Hoja de datos )
| Número de pieza | IRF7328 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRF7328 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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q Trench Technology
q Ultra Low On-Resistance
q Dual P-Channel MOSFET
q Available in Tape & Reel
VDSS
-30V
PD -94000
IRF7328
HEXFET® Power MOSFET
RDS(on) max
21mΩ@VGS = -10V
32mΩ@VGS = -4.5V
ID
-8.0A
-6.8A
www.DataSheet4U.com
Description
New trench HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
To p V iew
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-32
2.0
1.3
16
± 20
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
www.irf.com
Max.
62.5
Units
°C/W
1
10/04/00
1 page  
IRF7328
10.0
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7328.PDF ] | |
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