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PDF IRF7326D2 Data sheet ( Hoja de datos )
| Número de pieza | IRF7326D2 | |
| Descripción | FETKY MOSFET / Schottky Diode | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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q Co-packaged HEXFET® Power MOSFET
and Schottky Diode
q Ideal For Buck Regulator Applications
q P-Channel HEXFET
q Low VF Schottky Rectifier
q Generation 5 Technology
q SO-8 Footprint
PD - 93763
IRF7326D2
FETKY™ MOSFET / Schottky Diode
A1
A2
S3
8K
7K
6D
VDSS = -30V
RDS(on) = 0.10Ω
G4
5D
Schottky Vf = 0.52V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum
-3.6
-2.9
-29
2.0
1.3
16
± 20
-5.0
-55 to +150
Thermal Resistance Ratings
S O -8
Units
A
W
mW/°C
V
V/ns
°C
Parameter
RθJA
Junction-to-Ambient
Maximum
62.5
Units
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
ISD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
8/19/99
1 page  
Power Mosfet Characteristics
IRF7326D2
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
0.50 0.14
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.12
0.10
0.08
ID = -3.6A
0.00
0
2 4 6 8 10 12 14
-ID , Drain Current (A)
0.06
4
6 8 10 12 14
-VGS , Gate-to-Source Voltage (V)
16
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7326D2.PDF ] | |
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