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TriQuint Semiconductor - Wideband Amplifier

Numéro de référence TGA4832
Description Wideband Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGA4832 fiche technique
Advance Product Information
April 13, 2005
DC - 35 GHz Wideband Amplifier
TGA4832
Product Description
The TriQuint TGA4832 is a medium power wideband
AGC amplifier which operates from DC to 35 GHz.
Typical small signal gain is 12dB and typical input and
output return losses are >10dB. The TGA4832
provides 18 dBm of output power at 1 dB gain
compression.
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Drain bias may be applied through the output port for
best efficiency or through the on-chip drain termination.
Two stages in cascade demonstrate 3.8Vpp output
voltage swing with 350mV at the input when stimulated
with 40Gb/s 2^31-1prbs NRZ data. RF ports are DC
coupled enabling the user to customize system corner
frequencies. The TGA4832 requires off-chip
decoupling and blocking components.
The TGA4832 is suitable for a variety of wideband
electronic warfare systems such as radar warning
receivers, electronic counter measures, decoys, and
jammers. It is also an excellent choice for 40Gb/s NRZ
applications. The TGA4832 is capable of driving an
Electro-Absorptive optical Modulator (EAM) with
electrical Non-Return to Zero (NRZ) data. In addition,
the TGA4832 may also be used as a predriver or a
receive gain block.
Bond pad and backside metallization is gold plated for
compatibility with eutectic alloy attachment methods as
well as the thermocompression and thermosonic wire
bonding processes. Each device is 100% DC and RF
tested on-wafer to ensure performance compliance.
The device is available in die form.
Key Features and Performance
• Frequency Range: DC to 35GHz Linear
• 40Gb/s Optical Modulator Driver
• 12dB Small Signal Gain
• 17 dBm Typical Output Power (4Vpp)
• < 15ps Edge Rates
• 4Vpp 40Gb/s NRZ PRBS Linear
• 0.15um pHEMT Technology
• Bias: Vd = 5V, Id = 135 mA
• Chip Size: 1.79 x 1.00 x 0.1 mm
(0.070 x 0.039 x 0.004 in)
Primary Applications
• Test Equipment
• Ultra Wideband
• 40Gb/s NRZ EAM Driver
• 40Gb/s NRZ Predriver or Gain Block
Measured Performance
Bias Conditions: Vd = 5V, Id = 135mA
15
12
9
6
3
0
-3
-6
-9
-12
-15
0
25
Gain
20
15
10
5
0
-5
Input
-10
-15
Output
-20
-25
5 10 15 20 25 30 35 40 45 50
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice
1
TriQuint Semiconductor Texas - Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com

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