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PDF TGA4502-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA4502-SCC | |
| Descripción | K Band High Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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K Band High Power Amplifier
Product Data Sheet
July 22, 2003
TGA4502-SCC
Key Features
• 17-27 GHz Application Frequency Range
• 22 dB Nominal Gain
• 29 dBm Nominal P1dB
• 37dBm Nominal OTOI
• 15 dB Nominal Return Loss
• 0.25 um pHEMT 2MI Technology
• Bias 7V @ 760 mA
• Chip Dimensions 1.52 x 3.29 x .1mm
Product Description
The TriQuint TGA4502-SCC is a compact
High Power Amplifier MMIC for K-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
Thewww.DataSheet4U.com TGA4502-SCC provides a nominal
29 dBm of output power at 1 dB gain
compression from 17-27 GHz with a small
signal gain of 22 dB.
The part is ideally suited for low cost
emerging markets such as K-band
Satellite Communications, Point-to-Point
Radio, and Point-to-Multi Point
Communications.
The TGA4502-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
Primary Applications
• K Band Sat-Com
• Point-to-Point Radio
• Point-to-Multipoint Communications
Fixtured Measured Performance
Bias Conditions: Vd = 7V, Id = 760mA
35
33 Psat
31
29
27 P1dB
25
23
21
17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
30
G a in
24
30
24
18 18
12 12
66
0 Output
0
-6 -6
-12 -12
-18 -18
-24 Inpu t
-30 t
-24
-30
14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
1 page  
Product Data Sheet
July 22, 2003
TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
30
Gain
24
30
24
18 18
12 12
66
0 Output
0
-6 -6
-12 -12
-18 -18
-24 Input
-30 t
-24
-30
14 16 18 20 22 24 26 28 30 32
Frequency (GHz)
35
33 Psat
31
29
27 P1dB
25
23
21
17 18 19 20 21 22 23 24 25 26 27
Frequency (GHz)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
5 Page 
Product Data Sheet
July 22, 2003
TGA4502-SCC
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C
(for 30 sec max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Die are shipped in H20-074149 waffle packs.
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA4502-SCC.PDF ] | |
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