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PDF TGA4501-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA4501-SCC | |
| Descripción | Ka Band HPA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Not Recommended for New Designs
Product Data Sheet
November 19, 2003
TGA4501-SCC
TriQuint Recommends the TGA4505-EPU be used for New Designs
24-31 GHz Ka Band HPA
Key Features
• 0.25 um pHEMT Technology
• 23 dB Nominal Gain
• 34.5 dBm Nominal P1dB
• 40 dBm IMD3 Typical
• Bias 6 V @ 2.1 A
Chip Dimensions 4.3 mm x 3.0 mm x 0.05 mm
Primary Applications
• Satellite Ground Terminal
• Point-to-Point Radio
Product Description
www.DataSheet4U.com The TriQuint TGA4501-SCC is a compact
3 Watt High Power Amplifier MMIC for
Ka-band applications. The part is
designed using TriQuint’s proven
standard 0.25 um gate Power pHEMT
production process.
The TGA4501 provides a nominal 34.5
dBm of output power at 1 dB gain
compression from 24-31 GHz with a small
signal gain of 23 dB.
Fixtured Data
Bias Conditions: Vd = 6V, Id = 2.1A± 5%
27
25
23
21
19
17
15
13
11
9
7
23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals,
point to point radio and LMDS.
The TGA4501-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
37
35
33
31
29
27
25
27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
1 page  
Not Recommended for New Designs
Product Data Sheet
November 19, 2003
TGA4501-SCC
TriQuint Recommends the TGA4505-EPU be used for New Designs
Fixtured Data
Bias Conditions: Vd = 6 V, Id = 2.1 A ± 5%
27
25
23
21
19
17
15
13
11
9
7
23 24 25 26 27 28 29 30 31 32
Frequency (GHz)
37
35
33
31
29
27
25
27 27.5 28 28.5 29 29.5 30 30.5 31 31.5 32
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
5 Page 
Not Recommended for New Designs
Product Data Sheet
November 19, 2003
TGA4501-SCC
TriQuint Recommends the TGA4505-EPU be used for New Designs
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (for 30
sec max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA4501-SCC.PDF ] | |
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