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HBN2411S6R fiches techniques PDF

Cystech Electonics - General Purpose NPN Epitaxial Planar Transistors

Numéro de référence HBN2411S6R
Description General Purpose NPN Epitaxial Planar Transistors
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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HBN2411S6R fiche technique
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
(dual transistors)
HBN2411S6R
Spec. No. : C203S6R
Issued Date : 2003.09.12
Revised Date : 2005.03.30
Page No. : 1/ 5
Features
Two BTC2411chips in a SOT-363 package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
High IC(Max) . IC (Max) = 0.6A
Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA
Optimal for low Voltage operation
Complementary to HBP1036S6R
Equivalent Circuit
Outline
HBN2411S6R
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
60
40
6
0.6
200(total)
150
-55~+150
(Note)
Note : 150mW per element must not be exceeded.
Unit
V
V
V
A
mW
°C
°C
HBN2411S6R
CYStek Product Specification

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