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CDBFR0320 fiches techniques PDF

Comchip Technology - (CDBFR0320 - CDBFR0340) SMD Schottky Barrier Diode

Numéro de référence CDBFR0320
Description (CDBFR0320 - CDBFR0340) SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBFR0320 fiche technique
SMD Schottky Barrier Diode
CDBFR0320/0330/0340
(RoHs Device)
IO = 350 mA
VR = 20 to 40 Volts
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
SMD Diodes Specialist
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Symbol CDBFR0320 CDBFR0330 CDBFR0340 Unit
Repetitive Peak reverse voltage
Reverse voltage
VRRM
VR
20
30
40 V
RMS reverse voltage
VR(RMS)
14
21
28 V
Average forward rectified current
IO
350 mA
Forward current, surge peak
8.3 ms single half sine-wave
IFSM
1.5 A
Power dissipation
Thermal resistance junction
to ambient air
Storage temperature
Junction temperature
PD
R JA
TSTG
Tj
200
500
-65 TO +125
+125
mW
OC/W
OC
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Reverse current
CDBFR0320
CDBFR0330
CDBFR0340
VR = 10V
VR = 20V
VR = 30V
5
IR 5 uA
5
Forward voltage
Capacitance between terminals
Reverse recovery time
IF = 20mA
IF = 200mA
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 ohm
VF
CT
Trr
0.37
0.60
V
50 pF
6.4 nS
QW-A1075
REV:B
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