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CDBFR0230L fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBFR0230L
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBFR0230L fiche technique
SMD Schottky Barrier Diode
CDBFR0230L(RoHs Device)
Io = 200 mA
VR = 30 Volts
SMD Diodes Specialist
Features
Low forward voltage.
Designed for mounting on small surface.
Extremely thin / leadless package.
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward current
Conditions
Symbol Min Typ Max Unit
VRRM
35 V
VR 30 V
IO 200 mA
Forward current,surge peak
8.3ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
1A
Storage temperature
Junction temperature
TSTG
Tj
-40
+125
+125
OC
OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Forward voltage
Reverse current
Conditions
IF = 200 mA
VR = 10 V
Symbol Min Typ Max Unit
VF 0.5 V
IR 30 uA
QW-A1067
REV:A
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