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CDBFR0145 fiches techniques PDF

Comchip Technology - SMD Schottky Barrier Diode

Numéro de référence CDBFR0145
Description SMD Schottky Barrier Diode
Fabricant Comchip Technology 
Logo Comchip Technology 





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CDBFR0145 fiche technique
SMD Schottky Barrier Diode
CDBFR0145(RoHs Device)
Io = 100 mA
VR = 45 Volts
SMD Diodes Specialist
Features
Designed for mounting on small surface.
Extremely thin/leadless package.
Low leakage current.
(IR=0.1uA typ.@VR=10V)
Majority carrier conduction.
Mechanical data
Case: 1005(2512) standard package,
molded plastic.
Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
Polarity: Indicated by cathode band.
Mounting position: Any
Weight: 0.006 gram(approx.).
1005(2512)
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.020(0.50) Typ.
0.035(0.90)
0.027(0.70)
0.040(1.00) Typ.
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Repetitive peak reverse voltage
VRRM
50 V
Reverse voltage
VR 45 V
Average forward current
IO 100 mA
Forward current,surge peak
Power Dissipation
8.3 ms single half sine-wave superimposed
on rate load(JEDEC method)
IFSM
PD
1000
mA
250 mW
Sunction temperature
TSTG
-40
+125 OC
Junction temperature
Tj +125 OC
Electrical Characteristics (at TA=25OC unless otherwise noted)
Parameter
Conditions
Symbol Min Typ Max Unit
Forward voltage
IF = 100 mA DC
VF 0.55 V
Reverse current
Capacitance between terimnals
VR = 10V
F = 1 MHZ and 10 VDC reverse voltage
IR
CT
1 uA
9 pF
QW-A1063
REV:A
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