(PDF) BFP540FESD Datasheet - Low Noise Silicon Bipolar RF Transistor

Número de pieza	BFP540FESD
Descripción	Low Noise Silicon Bipolar RF Transistor
Fabricantes	Infineon Technologies
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No Preview Available ! Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • Excellent ESD performance typical value 1000 V (HBM) • Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB • Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available BFP540FESD 3 2 4 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking Pin Configuration AUs 1=B 2=E 3=C 4=E - - Package TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 80 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 1TS is measured on the emitter lead at the soldering point to the pcb Value 4.5 4 10 10 1 80 8 250 150 -55 ... 150 Unit V mA mW °C 1 2013-09-05 1 page Package TSFP-4 BFP540FESD 5 2013-09-05 5 Page

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PDF BFP540FESD Data sheet ( Hoja de datos )