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IRG4PH20K fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRG4PH20K
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRG4PH20K fiche technique
www.DataSheet4U.com
PD -91776
IRG4PH20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 1200V
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
TO-247AC
Max.
1200
11
5.0
22
22
10
±20
130
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
1
6/25/98

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