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PDF 2N7002W-G Data sheet ( Hoja de datos )
| Número de pieza | 2N7002W-G | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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MOSFET
2N7002W-G (N-Channel)
RoHS Device
COMCHIP
SMD Diodes Specialist
Features
-High density cell design for low RDS(ON).
-Voltage control small signal switch.
-Rugged and reliable.
-High saturation current capability.
Marking: K72
Equivalent Circuit
0.054(1.35)
0.045(1.15)
0.044(1.10)
0.035(0.90)
SOT-323
0.087(2.20)
0.070(1.80)
D
GS
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.087(2.20)
0.078(2.00)
D
G : Gate
S : Source
G D : Drain
0.016(0.40)
0.008(0.20)
0.004(0.10)max
0.004(0.10)min
S Dimensions in inches and (millimeter)
Electrical Ratings (at TA=25 OC unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source voltage
VDS 60 V
Drain current
Power dissipation
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Junction and storage temperature range
ID
PD
TJ, TSTG
115
225
-55 to +150
mA
mW
OC
Electrical Characteristics (at TA=25 OC unless otherwise noted)
Parameter
Conditions
Symbol Min
Typ Max Unit
Drain-Source breakdown voltage
Gate-Threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
Drain-Source on resistance
Forward trans conductance
Drain-source on-voltage
Diode forward voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
VGS=0V, ID=10μA
VGS=0V, ID=3mA
VDS=VGS, ID=250μA
VDS=0V, VGS=±25V
VDS=60V, VGS=0V
VGS=10V, VDS=7V
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VDS=10V, ID=200mA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
IS=115mA, VGS=0V
VDS=25V, VGS=0V, f=1MHz
VDD=25V, RL=50Ω, ID=500mA,
VGEN=10V, RG=25Ω
VBR(DSS)
Vth(GS)
IGSS
IDSS
ID(ON)
rDS(ON)
gfs
VDS(ON)
VSD
Ciss
Coss
Crss
td(on)
td(off)
60
60
1
500
80
V
VV
2.5
±100
1
7.5
7.5
3.75
0.375
1.2
50
25
5
20
40
V
nA
μA
mA
Ω
mS
V
V
pF
nS
QW-BTR25
REV:A
Page 1
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| PDF Descargar | [ Datasheet 2N7002W-G.PDF ] | |
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