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PDF IRF7464PBF Data sheet ( Hoja de datos )

Número de pieza IRF7464PBF
Descripción HEXET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7464PBF Hoja de datos, Descripción, Manual

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PD- 95273
SMPS MOSFET
IRF7464PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
200V
RDS(on) max
0.73
ID
1.2A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
1.2
1.0
10
2.5
0.02
± 30
6.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes  through † are on page 8
www.irf.com
1
9/21/04

1 page




IRF7464PBF pdf
Fig 6. On-Resistance Vs. Drain Current
IRF7464PbF
1.6
1.2
0.8
0.4
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
0.02
1
0.01
0.1
0.00001
PDM
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5

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