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PDF IRF7413ZPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7413ZPBF | |
| Descripción | Control FET | |
| Fabricantes | International Rectifier | |
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PD - 95335B
IRF7413ZPbF
Applications
l Control FET for Notebook Processor
Power
l Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
ID
10m:@VGS = 10V 13A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Max.
30
± 20
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJL Junction-to-Drain Lead
RθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 10
www.irf.com
1
6/30/05
1 page  
IRF7413ZPbF
14
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
2.5
2.0
ID = 250µA
1.5
1.0
0.5
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
τJ τJ
τ1 τ1
R1R1
R2R2
τ2 τ2
R3R3
τ3 τ3
R4R4
τCτ
Ri (°C/W)
1.8556
2.4927
τ4τ4 25.570
τi (sec)
0.000337
0.012752
0.691000
CiC= iτi/Ri/iRi
20.340
21.90000
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
P DM
t1
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJA
+T A
t2
1 10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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