|
|
Numéro de référence | IRF610A | ||
Description | Advanced Power MOSFET | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
www.DataSheet4U.com
Advanced Power MOSFET
IRF610A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
Low RDS(ON) : 1.169 Ω(Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 oC)
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 oC)
Linear Derating Factor
O2
O1
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
BVDSS = 200 V
RDS(on) = 1.5 Ω
ID = 3.3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
200
3.3
2.1
10
+_ 30
44
3.3
3.8
5.0
38
0.31
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
Thermal Resistance
Symbol
RθJC
R θCS
RθJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
3.28
--
62.5
Units
oC/W
Rev. B
©1999 Fairchild Semiconductor Corporation
|
|||
Pages | Pages 7 | ||
Télécharger | [ IRF610A ] |
No | Description détaillée | Fabricant |
IRF610 | N-Channel Mosfet Transistor | Inchange Semiconductor |
IRF610 | 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
IRF610 | N-Channel Power MOSFETs/ 3.5A/ 150-200V | Fairchild Semiconductor |
IRF610 | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |