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PDF GB15RF120K Data sheet ( Hoja de datos )
| Número de pieza | GB15RF120K | |
| Descripción | IGBT PIM MODULE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IGBT PIM MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10µs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
• Positive VCE (on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
Benefits
• Benchmark Efficiency for Motor Control
• Rugged Transient Performance
• Low EMI, Requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Low Junction to Case Thermal Resistance
• UL Listed
ECONO2 PIM
PD - 94571
GB15RF120K
VCES = 1200V
IC = 15A, TC=80°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 2.55V
Absolute
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Maximum
Ratings
(TJ
=25°C,
unless
otherwise
indicated)
Parameter
Symbol
Test Conditions
Inverter Collector-to-Emitter Voltage
VCES
Gate-to-Emitter Voltage
Collector Current
VGES
IC
Continuous
25°C / 80°C
ICM 25°C
Diode Maximum Forward Current
IFM d
25°C
Power Dissipation
PD
1 device
25°C
Input Repetitive Peak Reverse Voltage
Rectifier Average Output Current
VRRM
IF(AV)
50/60Hz sine pulse
80°C
Surge Current (Non Repetitive)
I2t (Non Repetitive)
IFSM Rated VRRM applied,10ms,
I2t sine pulse
Brake
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
VCES
VGES
IC
Continuous
25°C / 80°C
ICM 25°C
Power Dissipation
PD
1 device
25°C
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
VRRM
TJ
Storage Temperature Range
TSTG
Isolation Voltage
VISOL
AC (1min.)
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
1
Symbol
RTHJC
Min
—
—
—
—
—
2.7
Typical
—
—
—
—
—
—
Ratings
1200
±20
25 / 15
50
50
125
1600
15
120
72
1200
±20
15 / 7.5
30
83
1200
150
-40 to +125
2500
Units
V
A
W
V
A
A2s
V
A
W
V
°C
V
Maximum Units
1.0 °C/W
1.6
1.5
2.3
1.0
3.3 Nm
www.irf.com
10/18/02
1 page  
Inverter
GB15RF120K
16
14
400V
12 600V
10
8
6
4
2
0
0 20 40 60 80 100
Q G, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. VGE
ICE = 15A; L = 1.0mH
50
45
40
35
30
25
20
15
10
5
0
0.0
25°C
125°C
1.0 2.0 3.0
VF (V)
4.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
4000
1000
3500
3000
EON
tdOFF
2500
2000
1500
1000
EOFF
100
tF
tR
tdON
500
0
0 10 20 30 40
IC (A)
Fig. 9 - Typ. Energy Loss vs. IC
TJ = 125°C; L=400µH; VCE= 600V,RG= 22Ω; VGE= 15V
10
0
10 20 30 40
IC (A)
Fig. 10 - Typ. Switching Time vs. IC
TJ = 125°C; L=400µH; VCE= 600V,RG= 22Ω;VGE= 15V
2500
1000
2000
1500
1000
500
EON
EOFF
tF
tdOFF
100
tdON
tR
0
0
10 20 30 40 50
RG (Ω)
Fig. 11 - Typ. Energy Loss vs. RG
TJ = 125°C; L=400µH; VCE= 600V, ICE= 15A; VGE= 15V
10
0
10 20 30 40 50
RG (Ω)
Fig. 12- Typ. Switching Time vs. RG
TJ = 125°C; L=400µH; VCE= 600V, ICE= 15A; VGE= 15V
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5
5 Page 
GB15RF120K
Brake
10
1 D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.01
0.02
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.404 0.000545
τ3τ3 0.714 0.015291
0.382 0.122321
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t1 , Rectangular Pulse Duration (sec)
Fig 35. Maximum Transient Thermal Impedance, Junction-to-Case (Brake IGBT)
1E+0
10
1 D = 0.50
0.20
0.10
0.1 0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.560 0.000301
τ3τ3 0.749 0.005573
0.991 0.049496
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
t1 , Rectangular Pulse Duration (sec)
Fig 36. Maximum Transient Thermal Impedance, Junction-to-Case (Brake Diode)
1E+0
900 18
800 tf
16
700
90% ICE
14
600 12
500 10
400 8
300 6
5% VCE
200 4
5% ICE
100 2
0
-100
Eoff Loss
0
-2
-0.60 0.40 1.40 2.40
Time(µs)
Fig. WF3- Typ. Turn-off Loss Waveform
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@ TJ = 125°C using Fig. CT.4
900 45
800 40
tr
700 35
TEST CURRENT
600 30
500 25
90% test current
400 20
300 15
200 10% test current 10
5% VCE
100 5
0
-100
10.00
Eon Loss
10.20 10.40 10.60
Time (µs)
0
-5
10.80
Fig. WF4- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
11
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet GB15RF120K.PDF ] | |
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