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PDF BFN16 Data sheet ( Hoja de datos )
| Número de pieza | BFN16 | |
| Descripción | SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995 7
BFN16
C
COMPLEMENTARY TYPE - BFN17
PARTMARKING DETAILS - DD
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNIT
Collector-Base
Breakdown Voltage
V(BR)CBO 250
V
Collector-Emitter
Breakdown Voltage
V(BR)CEO 250
V
250
250
5
500
200
100
1
-65 to +150
CONDITIONS.
IC=100µA
IC=1mA
V
V
V
mA
mA
mA
W
°C
Emitter-Base Breakdown V(BR)EBO 5
Voltage
V IE=100µA
Collector Cut-Off Current ICBO
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
IEBO
VCE(sat)
100 nA
20 µA
100 nA
0.4 V
VCB=250V
VCB=250V, Tamb=150 °C
VEB=3V
IC=20mA, IB=2mA
Base-Emitter Saturation VBE(sat)
Voltage
0.9 V
IC=20mA, IB=2mA
Static Forward Current
Transfer Ratio
hFE
Transition Frequency
fT
25
40
40
Typ.70
MHz
IC=1mA,VCE=10V*
IC=10mA, VCE=10V
IC=30mA, VCE=10V
IC=20mA, VCE=10V*
f=20MHz
Output Capacitance
Cobo
Typ.1.5
pF VCB=30V,f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet
3 - 42
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BFN16.PDF ] | |
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