PDF PESD24VU1UT Data sheet ( Hoja de datos )

Número de pieza	PESD24VU1UT
Descripción	(PESDxU1UT) Ultra low capacitance ESD protection diode
Fabricantes	NXP Semiconductors
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No Preview Available ! PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 01 — 11 May 2005 Product data sheet 1. Product proﬁle www.DataSheet4U.com 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients. 1.2 Features s Unidirectional ESD protection of one line s Ultra low diode capacitance: Cd = 0.6 pF s Max. peak pulse power: PPP up to 200 W s Low clamping voltage s ESD protection > 23 kV s IEC 61000-4-2; level 4 (ESD) s IEC 61000-4-5; (surge) 1.3 Applications s 10/100/1000 Ethernet s FireWire s Communication systems s Local Area Network (LAN) equipment s Computers and peripherals s High-speed datalines 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VRWM reverse stand-off voltage PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V Cd diode capacitance f = 1 MHz; VR = 0 V [1] - 0.6 1.5 pF [1] Measured from pin 1 to 2 1 page Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 6. Characteristics Table 8: Characteristics Tamb = 25 °C unless otherwise speciﬁed. Symbol Parameter VRWM reverse stand-off voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT IRM reverse leakage current PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT VBR breakdown voltage PESD3V3U1UT PESD5V0U1UT www.DataSheet4U.com PESD12VU1UT PESD15VU1UT PESD24VU1UT Cd diode capacitance VCL clamping voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT rdif differential resistance PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT Conditions VRWM = 3.3 V VRWM = 5.0 V VRWM = 12 V VRWM = 15 V VRWM = 24 V IR = 5 mA f = 1 MHz; VR = 0 V IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 5 A IPP = 1 A IPP = 3 A IR = 1 mA Min - - - - - - - - - - [2] 5.8 7.0 14.2 17.1 25.4 [2] - [1] [2] - - - - - - - - - - - - - - - Typ - - - - - 0.25 0.03 <1 <1 <1 6.4 7.6 15.0 18.9 27.8 0.6 - - - - - - - - - - - - - - - Max 3.3 5.0 12 15 24 2 1 50 50 50 6.9 8.2 16.7 20.3 30.3 1.5 9 20 12 21 23 39 28 53 40 76 400 80 200 225 300 Unit V V V V V µA µA nA nA nA V V V V V pF V V V V V V V V V V Ω Ω Ω Ω Ω [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2 9397 750 14912 Product data sheet Rev. 01 — 11 May 2005 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 5 of 13 5 Page Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 11. Revision history Table 10: Revision history Document ID Release date Data sheet status PESDXU1UT_SER_1 20050511 Product data sheet Change notice Doc. number Supersedes - 9397 750 14912 - www.DataSheet4U.com 9397 750 14912 Product data sheet Rev. 01 — 11 May 2005 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 11 of 13 11 Page

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