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Número de pieza | NL17SV16XV5T2 | |
Descripción | Ultra-Low Voltage Buffer | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NL17SV16XV5T2
Ultra−Low Voltage Buffer
The NL17SV16XV5T2 is an ultra−high performance single Buffer
fabricated in sub−micron silicon gate (0.35 m) CMOS technology with
excellent performance down to 0.9 V. This device is ideal for extremely
high−speed and high−drive applications. Additionally, limitations of
board space are no longer a constraint. The very small SOT−553 makes
this device fit most tight designs and spaces.
The internal circuit is composed of three stages; including a
buffered output which provides high noise immunity and stable
output. The NL17SV16XV5T2 input structure provides protection
when voltages up to 3.6 V are applied.
Features
• Extremely High Speed: 1.5 ns (Typ) at VCC = 3.3 V
• Designed for 0.9 V to 3.6 V Operation
• Over Voltage Tolerance* (OVT) Input
Permits Logic Translation
• Balanced "24 mA Output Drive @ 3.3 Volts
• Near Zero Static Supply Current
• Ultra−Tiny SOT−553 5 Pin Package only 1.6 x 1.6 mm Footprint
Applications
• Cellular
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• Digital Camera
• PDA
• Digital Video
*Over Voltage Tolerance (OVT) enables pins to function outside (higher) of their
operating voltages, with no damage to the devices or to signal integrity.
http://onsemi.com
5
1
SOT−553
CASE 463B
MARKING
DIAGRAM
5
UN D
1
UN = Specific Device Code
D = Date Code
PIN ASSIGNMENT
1 NC
2 IN A
3 GND
4 OUT Y
5 VCC
NC 1
5 VCC
IN A 2
GND 3
4 OUT Y
Figure 1. Pinout (Top View)
FUNCTION TABLE
Input A
Output Y
LL
HH
ORDERING INFORMATION
Device
Package
NL17SV16XV5T2 SOT−553
Shipping†
4000 Tape & Reel
(178 mm)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 0
1
Publication Order Number:
NL17SV16XV5T2/D
1 page NL17SV16XV5T2
PACKAGE DIMENSIONS
SOT−553
5−LEAD PACKAGE
CASE 463B−01
ISSUE A
A
−X− C
54
12 3
B
−Y−
D 5 PL
G 0.08 (0.003) M X Y
K
S
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 1.50 1.70 0.059 0.067
B 1.10 1.30 0.043 0.051
C 0.50 0.60 0.020 0.024
D 0.17 0.27 0.007 0.011
G 0.50 BSC
0.020 BSC
J 0.08 0.18 0.003 0.007
K 0.10 0.30 0.004 0.012
S 1.50 1.70 0.059 0.067
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NL17SV16XV5T2.PDF ] |
Número de pieza | Descripción | Fabricantes |
NL17SV16XV5T2 | Ultra-Low Voltage Buffer | ON Semiconductor |
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