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PDF ZXMHC6A07T8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMHC6A07T8 | |
| Descripción | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE | |
| Fabricantes | Zetex Semiconductors | |
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ZXMHC6A07T8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.300 ; ID= 1.8A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.425 ; ID= -1.5A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low On - Resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SM8 package
APPLICATIONS
• Motor drive
S1
G1
D1, D2
G2
SM8
S4
G4
D3, D4
G3
ORDERING INFORMATION
DEVICE
ZXMHC6A07T8TA
ZXMHC6A07T8TC
REEL
SIZE
7’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
• ZXMH
C6A07
S2 S3
PINOUT DIAGRAM
Top View
ISSUE 1 - JULY 2004
1 SEMICONDUCTORS
1 page  
ZXMHC6A07T8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-60
V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1 A VDS=-60V, VGS=0V
Gate-Body Leakage
IGSS
100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
Static Drain-Source On-State Resistance (1) RDS(on)
Forward Transconductance (1)(3)
DYNAMIC (3)
gfs
-1.0
V
I =-250µA,
D
VDS=
VGS
0.425
0.630
Ω VGS=-10V, ID=-0.9A
Ω VGS=-4.5V, ID=-0.8A
1.8 S VDS=-15V,ID=-0.9A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
233
17.4
9.6
pF
pF
VDS=-30 V, VGS=0V,
f=1MHz
pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
VSD
trr
Qrr
1.6 ns
2.3 ns VDD =-30V, ID=-1A
13 ns RG≅6.0Ω, VGS=-10V
5.8 ns
2.4 nC VDS=-30V,VGS=-5V,
ID=-0.9A
5.1 nC
0.7
nC
VDS=-30V,VGS=-10V,
ID=-0.9A
0.7 nC
-0.85 -0.95
22.6
23.2
V TJ=25°C, IS=-0.8A,
VGS=0V
ns TJ=25°C, IF=-0.9A,
di/dt= 100A/µs
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JULY 2004
5 SEMICONDUCTORS
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ZXMHC6A07T8.PDF ] | |
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