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Numéro de référence | ECL06B03 | ||
Description | Schottky Barrier Diode | ||
Fabricant | Nihon Inter Electronics | ||
Logo | |||
SBD Type : ECL06B03
FEATURES
* TO-251AA Case
* Dual Diodes Cathode Common
* Extremely Low Forward Voltage drop
* Low Power Loss,High Efficiency
* High Surge Capability
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.35g
Rating
Symbol
ECL06B03
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
VRRM
IO
IF(RMS)
IFSM
Tjw
Tstg
30
6.0 Tc=70°C
50Hz Full Sine Wave
Resistive Load
6.66
45
50Hz Full Sine Wave,1cycle,
Non-repetitive
- 40 to + 100
- 40 to + 125
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Electrical • Thermal Characteristics
Unit
V
A
A
A
°C
°C
Characteristics
Peak Reverse Current
Peak Forward Voltage
Thermal Resistance Junction to Case
Symbol
Conditions
IRM Tj=25°C,VRM=VRRM per Arm
VFM Tj=25°C,IFM= 3 A per Arm
Rth(j-c)
-
Min Typ Max
- - 3.0
- - 0.47
-- 5
Unit
mA
V
°C/W
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Pages | Pages 6 | ||
Télécharger | [ ECL06B03 ] |
No | Description détaillée | Fabricant |
ECL06B03 | Schottky Barrier Diode | Nihon Inter Electronics |
ECL06B03-F | SBD | ETC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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