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Numéro de référence | ZXM41N10F | ||
Description | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET | ||
Fabricant | Zetex Semiconductors | ||
Logo | |||
1 Page
ZXM41N10F
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
www.DataSheet4U.com
FEATURES
• BVDSS = 100V
• Low Threshold
DEVICE MARKING
• 410
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Drain-gate voltage
Continuous drain current at Tamb=25°C
Pulsed drain current
Gate-source voltage
Power dissipation at Tamb=25°C
Operating and storage temperature range
PINOUT TOP VIEW
SYMBOL
VDS
VDGR
ID
IDM
VGS
Ptot
Tj:Tstg
VALUE
100
100
170
680
± 20
360
-55 to +150
SOT23
UNIT
V
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-body leakage
Zero gate voltage drain current
Static drain-source on-state
resistance (1)
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Forward transconductance (1)(2)
Input capacitance (2)
Common source output
capacitance (2)
Reverse transfer capacitance (2)
Turn-on delay time (2)(3)
Rise time (2)(3)
Turn-off delay time (2)(3)
Fall time (2)(3)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
100
0.5
80
25
9
4
10
10
15
25
V ID=0.25mA, VGS=0V
1.5
V
I =1mA,
D
VDS=
VGS
50 nA VGS=±20V, VDS=0V
500 nA VDS=100V, VGS=0V
8 ⍀ VGS=4.5V, ID=150mA
12 ⍀ VGS=3V, ID=50mA
mS VDS=25V, ID=100mA
pF
pF VDS=25V, VGS=0V, f=1MHz
pF
ns
ns VDD ≈30V, ID=280mA
ns
ns
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE 2 - OCTOBER 2006
1
SEMICONDUCTORS
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Pages | Pages 2 | ||
Télécharger | [ ZXM41N10F ] |
No | Description détaillée | Fabricant |
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