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Número de pieza | KEL1001L | |
Descripción | Infrared Emitting Diode | |
Fabricantes | KODENSHI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de KEL1001L (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Infrared Emitting Diode(GaAs)
KEL1001L
The KEL1001L, high-power GaAs IRED mounted
in a clear side-looking package, is compact,
narrow radiant angle, and easy to mount.
Features
High power with narrow radiant angle
Side-looking with plastic package
RoHS Compliant
Applications
Photointerrupter
Optical switches
Mouse, toys
Dimensions
[Unit : mm]
www.DataSheet4U.com
G.Tolerance : ±0.2
Absolute Maximum Ratings
Parameter
Symbol
[TA = 25 ]
Rating Unit
Forward Current
Reverse Voltage
Pulse Forward Current*1
Power Dissipation
Operating Temperature
IF
VR
IFP
PD
Topr.
50
5
1
100
-25~+85
mA
V
A
mW
Storage Temperature
Tstg. -30~+100
Soldering Temperature*2
Tsol 260
*1. Pulse width tw=100µsec, cycle T=10msec
*2. Distance from end of the package =2mm, time=5sec, Max.
Electro-Optical Characteristics
Parameter
Forward Voltage
Reverse Current
Capacitance
Radiant intensity
Peak Wavelength
Spectral Width at FWHM
Half Angle
Symbol
VF
IR
CT
PO
p
Conditions
IF=20㎃
VR=5V
f=1㎒
IF=20㎃
IF=20㎃
Min.
-
-
-
-
-
-
-
Typ.
1.2
-
25
5
940
50
10
Max.
2.0
100
-
-
-
-
-
[TA = 25 ]
Unit.
V
µA
㎊
㎽/sr
nm
nm
degrees
-1-
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet KEL1001L.PDF ] |
Número de pieza | Descripción | Fabricantes |
KEL1001L | Infrared Emitting Diode | KODENSHI |
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