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Numéro de référence | IRF7473PBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
PD- 95559
IRF7473PbF
Applications
l Telecom and Data-Com 24 and 48V
input DC-DC converters
l Motor Control
l Uninterrutible Power Supply
l Lead-Free
Benefits
l Ultra Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristic
l Improved Avalanche Ruggedness and
Dynamic dv/dt
l Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
l Forward 24V input Circuit
HEXFET® Power MOSFET
VDSS
100V
RDS(on) max
ID
26mW@VGS = 10V 6.9A
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
6.9
5.5
55
2.5
0.02
± 20
5.8
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
8/17/04
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Pages | Pages 8 | ||
Télécharger | [ IRF7473PBF ] |
No | Description détaillée | Fabricant |
IRF7473PBF | HEXFET Power MOSFET | International Rectifier |
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