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PDF HFB08TB120PBF Data sheet ( Hoja de datos )
| Número de pieza | HFB08TB120PBF | |
| Descripción | SOFT RECOVERY DIODE | |
| Fabricantes | International Rectifier | |
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HEXFREDTM
PD-95736
HFA08TB120PbF
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
VR = 1200V
VF (typ.)* = 2.4V
IF (AV) = 8.0A
Qrr (typ.)= 140nC
IRRM (typ.) = 4.5A
trr (typ.) = 28ns
di(rec) M /dt (typ.)* = 85A /µs
TO-220AC
Description
International Rectifier's HFA08TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA08TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA08TB120 is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
1200
8.0
130
32
73.5
29
- 55 to 150
Units
V
A
W
°C
1
10/18/04
1 page  
Reverse Recovery Circuit
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
ddiifF/d/tdt
ADJUST G
D
IRFP250
S
HFA08TB120PbF
Fig. 9- Reverse Recovery Parameter Test Circuit
IF
0
3
trr
ta
tb
1 ddiiFf /dt
2
I RRM
Q rr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by t rr
and IRRM
Q
rr
=
t
rr
x
I
2
RRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
Fig. 10 - Reverse Recovery Waveform and Definitions
www.irf.com
5
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