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PDF HMC475ST89E Data sheet ( Hoja de datos )
| Número de pieza | HMC475ST89E | |
| Descripción | InGaP HBT GAIN BLOCK MMIC AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
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HMC475ST89 / 475ST89E
v01.0107
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
5
Typical Applications
Features
The HMC475ST89 / HMC475ST89E is an ideal RF/IF
gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF and RF Applications
P1dB Output Power: +22 dBm
Gain: 21.5 dB
Output IP3: +35 dBm
Cascadable 50 Ohm I/Os
Single Supply: +8V to +12V
Industry Standard SOT89 Package
Functional Diagram
www.DataSheet4U.com
General Description
The HMC475ST89(E) is a InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4.5 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +25 dBm output power.
The HMC475ST89(E) offers 21.5 dB of gain and +35
dBm output IP3 at 850 MHz while requiring only 110
mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
5 - 432
Electrical Specifications, Vs= 8.0 V, Rbias= 9.1 Ohm, TA = +25° C
Parameter
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.5 GHz
DC - 1.0 GHz
1.0 - 4.5 GHz
DC - 4.5 GHz
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
4.0 - 4.5 GHz
DC - 2.5 GHz
2.5 - 4.5 GHz
DC - 3.0 GHz
3.0 - 4.5 GHz
Min.
19.5
17.5
14.5
11.5
9
19.0
18.0
17.5
13.0
11.0
Typ.
21.5
19.5
16.5
13.5
12
0.008
11
14
14
13
10
25
22.0
21.0
19.5
16.0
14.0
35
30
3.5
3.8
Supply Current (Icq)
110
Note: Data taken with broadband bias tee on device output.
Max.
0.012
135
Units
dB
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
5
Pin Descriptions
Pin Number
Function
1 IN
v01.0107
HMC475ST89 / 475ST89E
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4.5 GHz
Description
This pin is DC coupled.
An off chip DC blocking capacitor is required.
Interface Schematic
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to
RF/DC ground.
Application Circuit
Recommended Bias Resistor Values for
Icc= 110 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
RBIAS VALUE
RBIAS POWER RATING
8V
9.1 Ω
¼W
9V
18 Ω
½W
10V
27 Ω
½W
12V
43 Ω
1W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. RBIAS provides DC bias stability over temperature.
5 - 436
Recommended Component Values for Key Application Frequencies
Component
L1
C1, C2
50
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
Frequency (MHz)
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
4500
6.8 nH
100 pF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
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| PDF Descargar | [ Datasheet HMC475ST89E.PDF ] | |
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