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Numéro de référence | 123NQ100PBF | ||
Description | Schottky Rectifier ( Diode ) | ||
Fabricant | International Rectifier | ||
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1 Page
SCHOTTKY RECTIFIER
Bulletin PD-21144 rev. A 10/06
123NQ100PbF
120Amp
www.DataSheet4U.com
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 μs sine
VF @120Apk,TJ=125°C
120
100
12800
0.73
TJ range
- 55 to 175
A
V
A
V
°C
Description/ Features
The 123NQ.. high current Schottky rectifier module series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation
up to 175 °C junction temperature. Typical applications are in
high current switching power supplies, plating power supplies,
UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175 °C TJ operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free
Case Styles
www.irf.com
HALF-PAK (D-67)
1
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Pages | Pages 6 | ||
Télécharger | [ 123NQ100PBF ] |
No | Description détaillée | Fabricant |
123NQ100PBF | Schottky Rectifier ( Diode ) | International Rectifier |
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TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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