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PDF W3EG6465S-D3 Data sheet ( Hoja de datos )

Número de pieza W3EG6465S-D3
Descripción 512MB - 64Mx64 DDR SDRAM UNBUFFERED
Fabricantes White Electronic 
Logotipo White Electronic Logotipo



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No Preview Available ! W3EG6465S-D3 Hoja de datos, Descripción, Manual

White Electronic Designs
W3EG6465S-D3
PRELIMINARY*
512MB – 64Mx64 DDR SDRAM UNBUFFERED
FEATURES
Double-date-rate architecture
DDR200 and DDR266
• JEDEC design specification
Bi-directional data strobes (DQS)
Differential clock inputs (CK CK#)
Programmable Read Latency 2, 2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interactive)
Edge aligned data output, center aligned data input
Auto and self refresh
Serial presence detected
Power supply: 2.5V ± 0.20V
standard 184 pin DIMM package
• Package height option:
www.DataSheet4U.com
D3: 30.48mm (1.20")
DESCRIPTION
The W3EDG6465S is a 64Mx64 Double Data Rate
SDRAM memory module based on 128Mb DDR SDRAM
components. The module consists of sixteen 64Mx4 DDR
SDRAMs in 66 pin TSOP packages mounted on a 184 pin
FR4 substrate.
Synchronous design allows precise cycle control with the
use of system clock. Data I/O transactions are possible on
both edges and Burst Lengths allow the same device to be
useful for a variety of high bandwidth, high performance
memory system applications.
* This product is under development, is not qualified or characterized and is subject to
change without notice.
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature option
Clock Speed
CL-tRCD-tRP
OPERATING FREQUENCIES
DDR266 @CL=2
133MHz
2-2-2
DDR266 @CL=2.5
133MHz
2.5-3-3
DDR266 @CL=2
133MHz
2-3-3
DDR200 @CL=2
100MHz
2-2-2
November 2005
Rev. 2
1 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

1 page




W3EG6465S-D3 pdf
White Electronic Designs
W3EG6465S-D3
PRELIMINARY
IDD SPECIFICATIONS AND TEST CONDITIONS
0°C TA 70°C, VCCQ = 2.5V ± 0.2V, VCC = 2.5V ± 0.2V
Includes DDR SDRAM component only
Parameter
Operating Current
Symbol
IDD0
Operating Current
IDD1
Precharge Power-
Down Standby
Current
Idle Standby Current
IDD2P
IDD2F
Active Power-Down
Standby Current
Active Standby
Current
IDD3P
IDD3N
Operating Current
IDD4R
Operating Current
IDD4W
Auto Refresh Current
Self Refresh Current
IDD5
IDD6
Operating Current
IDD7A
Conditions
One device bank; Active - Precharge; tRC=tRC
(MIN); tCK=tCK (MIN); DQ,DM and DQS inputs
changing once per clock cycle; Address and control
inputs changing once every two cycles.
One device bank; Active-Read-Precharge Burst
= 2; tRC=tRC (MIN); tCK=tCK (MIN); lOUT = 0mA;
Address and control inputs changing once per
clock cycle.
All device banks idle; Power-down mode; tCK=tCK
(MIN); CKE=(low)
CS# = High; All device banks idle; tCK=tCK (MIN);
CKE = high; Address and other control inputs
changing once per clock cycle. VIN = VREF for DQ,
DQS and DM.
One device bank active; Power-Down mode; tCK
(MIN); CKE=(low)
CS# = High; CKE = High; One device bank; Active-
Precharge; tRC=tRAS (MAX); tCK=tCK (MIN); DQ, DM
and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once
per clock cycle.
Burst = 2; Reads; Continuous burst; One device
bank active; Address and control inputs changing
once per clock cycle; TCK= TCK (MIN); lOUT = 0mA.
Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing
once per clock cycle; tCK=tCK (MIN); DQ,DM and
DQS inputs changing once per clock cycle.
tRC = tRC (MIN)
CKE 0.2V
Standard
Low Power
Four bank interleaving Reads (BL=4) with auto
precharge with tRC=tRC (MIN); tCK=tCK (MIN);
Address and control inputs change only during
Active Read or Write commands.
DDR266@CL=2 DDR266@CL=2/2.5 DDR200@CL=2
Max Max Max
1280 1280 1280
1600 1600 1600
48 48 48
320 320 320
480 480 480
720 720 720
1920 1920 1920
2160 2160 2160
2560 2560 2560
48 48 48
25 25 25
3840 3840 3840
Units
mA
mA
rnA
mA
mA
mA
mA
rnA
mA
mA
mA
November 2005
Rev. 2
5 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

5 Page





W3EG6465S-D3 arduino
White Electronic Designs
Document Title
512MB - 64Mx64, DDR SDRAM UNBUFFERED
Revision History
Rev #
Rev A
Rev 0
Rev 1
Rev 2
History
Created
0.1 Updated CAP and IDD specs
0.2 Removed "ED" from part marking
0.3 Moved status from Advanced to Preliminary
1.1 Added lead-free and RoHS notes
1.2 Added vendor source control notes
1.3 Added industrial temp notes
1.4 Added AC specs
2.1 Updated RoHS notes
2.2 Correction to IDD spec
W3EG6465S-D3
PRELIMINARY
Release Date Status
9-23-02
Advanced
6-04
Preliminary
12-04
Preliminary
11-05
Preliminary
November 2005
Rev. 2
11 White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com

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