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PDF IRLR8503 Data sheet ( Hoja de datos )
| Número de pieza | IRLR8503 | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRLPRD8-93580393A
IRLR8503
• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current
applications
HEXFET® MOSFET for DC-DC Converters
D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
G
S D-Pak
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including RDS(on), gate charge and Cdv/dt-
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q & R for reduced
sw DS(on)
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
DEVICE RATINGS (MAX. Values)
V
DS
RDS(on)
QG
Qsw
Q
oss
IRLR8503
30V
18 mΩ
20 nC
8 nC
29.5 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 10V)U
Pulsed Drain CurrentQ
TC = 25°C
TC = 90°C
Power DissipationU
TC = 25°C
TC = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current Q
Thermal Resistance
Parameter
Maximum Junction-to-AmbientS
Maximum Junction-to-Lead
www.irf.com
Symbol
VDS
VGS
ID
IDM
PD
TJ, TSTG
I
S
I
SM
Symbol
RθJA
RθJL
IRLR8503
30
±20
44
32
196
62
30
–55 to 150
15
196
Max.
50
2.0
Units
V
A
W
°C
A
Units
°C/W
°C/W
1
12/21/00
1 page  
2.5
ID = 15A
VGS = 4.5V
2.0
1.5
1.0
Typical Characteristics
IRLR8503
6.0
ID= 15A
VDS = 20V
4.0
IRLR8503
2.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Figure 8. Normalized On-Resistance vs. Temperature
0.015
0.014
0.013
0.0
0
4 8 12
QG, Total Gate Charge (nC)
16
Figure 9. Gate-to-Source Voltage vs. Typical Gate
Charge
2500
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
0.012
0.011
ID = 15A
0.010
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
VGS, Gate -to -Source Voltage (V)
Figure 10. Typical Rds(on) vs. Gate-to-Source Voltage
100
1000.0
1000
Coss
500
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Figure 11. Typical Capacitance vs. Drain-to-Source Voltage
www.irf.com
100.0 TJ = 150°C
10.0
TJ = 25°C
VDS = 15V
20µs PULSE WIDTH
1.0
2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS, Gate-to-Source Voltage (V)
Figure 12. Typical Transfer Characteristics
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRLR8503.PDF ] | |
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